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Exploring defects in nanoscale devices for possible quantum computing applications

07:38 EDT 19 Oct 2016 | Physorg.COM

Researchers at Tokyo Institute of Technology in collaboration with the University of Cambridge have studied the interaction between microwave fields and electronic defect states inside the oxide layer of field-effect transistors at cryogenic temperatures. It has been found that the physics of such defect states are consistent with driven two-level systems possessing long coherence times, and that their induced dynamics can be coherently and independently controlled.

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