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Low Temperature Growth of Highly Nitrogen-Doped Single Crystal Graphene Arrays by Chemical Vapor Deposition.

16:29 EDT 18th May 2013 | BioPortfolio

Summary of "Low Temperature Growth of Highly Nitrogen-Doped Single Crystal Graphene Arrays by Chemical Vapor Deposition."

The ability to dope graphene is highly important for modulating electrical properties of graphene. However, the current route for the synthesis of N-doped graphene by chemical vapor deposition (CVD) method mainly involves high growth temperature using ammonia gas or solid reagent melamine as nitrogen sources, leading to graphene with low doping level, polycrystalline nature, high defect density and low carrier mobility. Here we demonstrate a self-assembly approach that allows the synthesis of single-layer, single-crystal and highly nitrogen-doped graphene flake arrays by self-organization of pyridine molecules on Cu surface at temperature as low as 300 C. These N-doped graphene flakes have dominated geometric structure of tetragonal-shaped, reflecting the single-crystal nature confirmed by electron-diffraction measurements. The electrical measurements of these graphene showed their high carrier mobility, high doping level and reliable N-doped behavior in both air and vacuum.

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This article was published in the following journal.

Name: Journal of the American Chemical Society
ISSN: 1520-5126
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