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A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices.

11:12 EDT 23rd April 2014 | BioPortfolio

Summary of "A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices."

A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.


Surface Chemistry Laboratory of Electronic Materials, Department of Chemical Engineering, POSTECH (Pohang University of Science and Technology), Pohang, 790-784, Korea.

Journal Details

This article was published in the following journal.

Name: Advanced materials (Deerfield Beach, Fla.)
ISSN: 1521-4095


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