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07:33 EDT 27th July 2016 | BioPortfolio

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Researchers develop a novel and efficient fabrication technology for cross-shaped memristor

Along with the fast development of modern information technology, charge-based memories, such as DRAM and flash memory, are being aggressively scaled down to meet the current trend of small size devic...

Experiments demonstrate how memristors work

In experiments at two Department of Energy national labs – SLAC National Accelerator Laboratory and Lawrence Berkeley National Laboratory – scientists at Hewlett Packard Enterprise (HPE) have expe...

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Existence and global exponential stability of periodic solution of memristor-based BAM neural networks with time-varying delays.

In this paper, we investigate a class of memristor-based BAM neural networks with time-varying delays. Under the framework of Filippov solutions, boundedness and ultimate boundedness of solutions of m...

Convertible resistive switching characteristics between memory switching and threshold switching in a single ferritin-based memristor.

A bio-memristor fabricated with ferritin exhibits novel resistive switching characteristics wherein memory switching and threshold switching are made steadily coexistent and inter-convertible through ...

Function projective synchronization of memristor-based Cohen-Grossberg neural networks with time-varying delays.

This paper deals with the problem of function projective synchronization for a class of memristor-based Cohen-Grossberg neural networks with time-varying delays. Based on the theory of differential eq...

Finite-time synchronization of fractional-order memristor-based neural networks with time delays.

In this paper, we consider the problem of finite-time synchronization of a class of fractional-order memristor-based neural networks (FMNNs) with time delays and investigated it potentially. By using ...

ZnO/Al:ZnO Transparent Resistive Switching Devices Grown by Atomic Layer Deposition for Memristor Applications.

ZnO has intrinsic semiconductor conductivity because of an unintentional doping mechanism resulting from the growth process that is mainly attributable to oxygen vacancies (VO) positioned in the bandg...

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