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Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene.

07:00 EST 8th February 2019 | BioPortfolio

Summary of "Optical properties of GaN Nanowires grown on chemical vapor deposited-Graphene."

Optical properties of GaN nanowires grown on chemical vapor deposited graphene transferred on an amorphous support are reported. The growth temperature was optimized to achieve a high nanowire density with a perfect selectivity with respect to a SiO2 surface. The growth temperature window was found to be rather narrow (815 ± 5) °C. Steady-state and time-resolved photoluminescence from GaN nanowires grown on graphene was compared with the results for GaN nanowires grown on conventional substrates within the same molecular beam epitaxy (MBE)reactor showing a comparable optical quality for different substrates. Growth at temperatures above 820°C led to a strong NW density reduction accompanied with a diameter narrowing. This morphology change leads to a spectral blueshift of the donor bound exciton emission line due to either surface stress or dielectric confinement. Graphene multi-layered micro-domains were explored as a way to arrange GaN nanowires in a hollow hexagonal pattern. The nanowires grown on these domains show a luminescence spectral linewidth as low as 0.28 meV (close to the set-up resolution limit).

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This article was published in the following journal.

Name: Nanotechnology
ISSN: 1361-6528
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