Fermi level tuning of Ag-doped BiSe topological insulator.

08:00 EDT 29th March 2019 | BioPortfolio

Summary of "Fermi level tuning of Ag-doped BiSe topological insulator."

The temperature dependence of the resistivity (ρ) of Ag-doped BiSe (AgBiSe) shows insulating behavior above 35 K, but below 35 K, ρ suddenly decreases with decreasing temperature, in contrast to the metallic behavior for non-doped BiSe at 1.5-300 K. This significant change in transport properties from metallic behavior clearly shows that the Ag doping of BiSe can effectively tune the Fermi level downward. The Hall effect measurement shows that carrier is still electron in AgBiSe and the electron density changes with temperature to reasonably explain the transport properties. Furthermore, the positive gating of AgBiSe provides metallic behavior that is similar to that of non-doped BiSe, indicating a successful upward tuning of the Fermi level.


Journal Details

This article was published in the following journal.

Name: Scientific reports
ISSN: 2045-2322
Pages: 5376


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