High-k Fluoropolymer Gate Dielectric in Electrically Stable Organic Field-Effect Transistors.

08:00 EDT 9th April 2019 | BioPortfolio

Summary of "High-k Fluoropolymer Gate Dielectric in Electrically Stable Organic Field-Effect Transistors."

A detailed study of a high-k fluoropolymer gate dielectric material, P(VDF-HFP), is presented as a guide to achieve low operational voltage and electrically stable device performance. The large dipole moment of C-F dipoles in P(VDF-HFP) is responsible for its high dielectric constant as well as its potentially ferroelectric behavior that must be minimized to avoid hysteretic current-voltage characteristics. A range of material grades and processing conditions are explored and are shown to have a significant effect on the degree of hysteresis observed in device transfer characteristics. The percent of HFP monomer in the P(VDF-HFP) dielectric has an effect on gate-dependent mobility induced by disorder at the semiconductor-dielectric interface. Most importantly, we present the considerations that must be made to achieve optimal performance in multiple device architectures of organic field-effect transistors when using P(VDF-HFP) as a dielectric layer.


Journal Details

This article was published in the following journal.

Name: ACS applied materials & interfaces
ISSN: 1944-8252


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