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In-situ Formation of WO3-based Heterojunction Photoanodes with Abundant Oxygen Vacancies via a Novel Microbattery Method.

08:00 EDT 9th April 2019 | BioPortfolio

Summary of "In-situ Formation of WO3-based Heterojunction Photoanodes with Abundant Oxygen Vacancies via a Novel Microbattery Method."

Nonstoichiometric ratio semiconductor materials have exhibited excellent performances in energy conversion and storage fields. However, the hydrogen treatment method that is commonly used to introduce oxygen vacancies is expensive and dangerous. In this paper, a novel microbattery method using Zn powder and Fe powder reduction processes has been developed to synthesize the oxygen vacancies modified WO3-x films and oxygen-deficient heterojunction ZnWO4-x/WO3-x and Fe2O3-x/WO3-x films at room temperature. The as-prepared oxygen vacancies containing WO3-x and oxygen-deficient ZnWO4-x/WO3-x heterojunction films exhibit an improved photoelectrochemical performance. It is worth noting that this method can quickly introduce oxygen vacancies into semiconductor materials at room temperature, including powders and films.

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This article was published in the following journal.

Name: ACS applied materials & interfaces
ISSN: 1944-8252
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