Understanding the effect of dry Etching on Nanoscale Phase-Change Memory.

08:00 EDT 2nd September 2019 | BioPortfolio

Summary of "Understanding the effect of dry Etching on Nanoscale Phase-Change Memory."

PCM (phase-change memory) is an important class of data storage, operating based on the Joule heating-induced reversible switching of chalcogenide alloys. Nanoscale PCM often requires advanced microfabrication techniques such as dry (plasma) etching, but the possible impacts of process damages or imperfections on the device performance still remain relatively unexplored. This is critical because some chemical etching species are known to cause over-etching with rough edge onto the sidewall of a phase-change material. It is also possible that the phase-change material experiences a composition change due to etching-induced re-deposition of by-products or thermal stress. In this study, a finite-element simulation is performed to understand the effect of dry etching on the RESET characteristics of a nanoscale PCM device to provide a guideline on the PCM manufacturing and cell design.


Journal Details

This article was published in the following journal.

Name: Nanotechnology
ISSN: 1361-6528


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Medical and Biotech [MESH] Definitions

Those occurrences, including social, psychological, and environmental, which require an adjustment or effect a change in an individual's pattern of living.

Preparation of TOOTH surfaces and DENTAL MATERIALS with etching agents, usually phosphoric acid, to roughen the surface to increase adhesion or osteointegration.

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The interval between two successive CELL DIVISIONS during which the CHROMOSOMES are not individually distinguishable. It is composed of the G phases (G1 PHASE; G0 PHASE; G2 PHASE) and S PHASE (when DNA replication occurs).

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