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A method for suppressing impurities in GaN thin films grown via plasma-enhanced atomic deposition (PEALD) through the in-situ pretreatment of Si (100) substrate with plasma was developed. This approach leads to a superior GaN/Si (100) interface. After pretreatment, the thickness of the interfacial layer between GaN films and the substrates decreases from 2.0 to 1.6 nm, and the oxygen impurity content at the GaN/Si (100) interface reduces from 34% to 12%. The pretreated GaN film exhibits a thinner amorphous GaN transition layer (5.3 nm) than that without pretreatment (18.0 nm), which indicates the improvement of crystallinity of GaN. High-quality GaN films with enhanced density are obtained due to the pretreatment. This promising approach is considered to facilitate the growth of high-quality thin films via PEALD.
This article was published in the following journal.
Name: ACS applied materials & interfaces
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