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monitoring of surface reactions during atomic layer etching of silicon nitride using hydrogen plasma and fluorine radicals.

08:00 EDT 12th September 2019 | BioPortfolio

Summary of "monitoring of surface reactions during atomic layer etching of silicon nitride using hydrogen plasma and fluorine radicals."

The atomic layer etching (ALE) of silicon nitride (SiN) via a hydrogen plasma followed by exposure to fluorine radicals was investigated using spectroscopic ellipsometry and attenuated total reflectance Fourier transform infrared spectroscopy to examine the surface reactions and etching mechanism. FTIR spectra of the surface following exposure to the hydrogen plasma showed an increase in the concentration of Si-H and N-H bonds, although the N-H bond concentration plateaued more quickly. In contrast, during fluorine radical exposure, the Si-H bond concentration decreased more rapidly. Secondary ion mass spectrometry demonstrated that the nitrogen atom concentration was decreased to a depth of 4 nm from the surface after the hydrogen plasma treatment, and indicated a structure consisting of N-H rich, Si-H rich, and mixed layers. It appears that Si-H bonds were primarily present near the surface, with N-H bonds mainly located deeper into the film. The formation of these N-H and Si-H rich layers are important phenomena associated with modification by hydrogen plasma and fluorine radical etching, respectively.

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This article was published in the following journal.

Name: ACS applied materials & interfaces
ISSN: 1944-8252
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