Engineering of self-rectifying filamentary resistive switching in LiNbO single crystalline thin film via strain doping.

07:00 EST 13th December 2019 | BioPortfolio

Summary of "Engineering of self-rectifying filamentary resistive switching in LiNbO single crystalline thin film via strain doping."

The abilities to fabricate wafer scale single crystalline oxide thin films on metallic substrates and to locally engineer their resistive switching characteristics not only contribute to the fundamental investigations of the resistive switching mechanism but also promote the practical applications of resistive switching devices. Here, wafer scale LiNbO (LNO) single crystalline thin films are fabricated on Pt/SiO/LNO substrates by ion slicing with wafer bonding. The lattice strain of the LNO single crystalline thin films can be tuned by He implantation as indicated by XRD measurements. After He implantation, the LNO single crystalline thin films show self-rectifying filamentary resistive switching behaviors, which is interpreted by a model that the local conductive filaments only connect/disconnect with the bottom interface while the top interface maintains the Schottky contact. Thanks to the homogeneous distribution of defects in single crystalline thin films, highly reproducible and uniform self-rectifying resistive switching with large on/off ratio over four order of magnitude was achieved. Multilevel resistive switching can be obtained by varying the compliance current or by using different magnitude of writing voltage.


Journal Details

This article was published in the following journal.

Name: Scientific reports
ISSN: 2045-2322
Pages: 19134


DeepDyve research library

PubMed Articles [9543 Associated PubMed Articles listed on BioPortfolio]

Bipolar resistive switching of Pt/Ga2O3-x/SiC/Pt thin film with ultrahigh OFF/ON resistance ratios.

A multiple-layer thin film of Pt/Ga2O3-x/SiC/Pt based resistive switching is systematically investigated. An excellent bipolar resistive switching behavior is observed with a high resistance switchin...

Resistive Switching of Silicon-Silver thin film devices in Flexible Substrates.

Novel applications for memory devices demand nanoscale flexible structures. In particular, resistive switching devices are promising candidates for wearable and implantable technologies. Here, the Pt/...

The mechanism underlying silicon oxide based resistive random-access memory (ReRAM).

In this work, we have inspected the theoretical resistive switching properties of two ReRAM models based on heterojunction structures of Cu/SiOx nanoparticles (NPs)/Si and Si/SiOx NPs/Si, in which die...

Silver/(sub-10-nm)hafnium-oxide-based resistive switching devices on silicon: characteristics and switching mechanism.

This study investigates the resistive switching (RS) behavior of Ag/HfO(3-nm-thick)/SiO(interfacial-layer)/Si devices. The findings are drawn from a systematic electrical and material characterization...

Breaking the quantum PIN code of atomic synapses.

Atomic synapses represent a special class of memristors whose operation relies on the formation of metallic nanofilaments bridging two electrodes across an insulator. Due to the magnifying effect of t...

Clinical Trials [3821 Associated Clinical Trials listed on BioPortfolio]

Dual and Single Switching Monopolar RFA Using Octopus Electrodes for Treatment of HCC

This study was conducted to prospectively compare the efficacy, safety and mid-term outcomes of dual-switching monopolar (DSM) radiofrequency ablation (RFA) with those of conventional sing...

Inner Engineering Online (IEO) Intervention for a Specific Company Employee Program

In this randomized controlled trial; differences in overall stress, burnout and wellbeing will be assessed for employees of a company participating in Inner Engineering Online, an online m...

Diagnostic Accuracy of Doppler Resistive Indices for Early Diagnosis of Acute Kidney Injury .

To determine if ultrasound measurement of renal and carotid arterial resistive indices are associated with post-cardiac surgery acute kidney injury.

Treatment Using 448 kHz CRMRF in Subacromial Syndrome.

The purpose of this study is to assess the effectiveness of 448 kHz capacitive resistive monopolar radiofrequency in the treatment of subacromial syndrome.

Efficacy of 448kilohertz Capacitive Resistive Monopolar Radiofrequency Stimulation in Chronic Shoulder Pain

448kilohertz capacitive resistive monopolar radiofrequency is a novel technique in physiotherapy and its usefulness and clinical relevance is still to be investigated. Current studies show...

Medical and Biotech [MESH] Definitions

Methods and techniques used to modify or select cells and develop conditions for growing cells for biosynthetic production of molecules (METABOLIC ENGINEERING), for generation of tissue structures and organs in vitro (TISSUE ENGINEERING), or for other BIOENGINEERING research objectives.

Gene rearrangement of the B-lymphocyte which results in a substitution in the type of heavy-chain constant region that is expressed. This allows the effector response to change while the antigen binding specificity (variable region) remains the same. The majority of class switching occurs by a DNA recombination event but it also can take place at the level of RNA processing.

A family of inwardly-rectifying potassium channels that are activated by PERTUSSIS TOXIN sensitive G-PROTEIN-COUPLED RECEPTORS. GIRK potassium channels are primarily activated by the complex of GTP-BINDING PROTEIN BETA SUBUNITS and GTP-BINDING PROTEIN GAMMA SUBUNITS.

Application of principles and practices of engineering science to the transformation, design, and manufacture of substances on an industrial scale.

A branch of engineering concerned with the design, construction, and maintenance of environmental facilities conducive to public health, such as water supply and waste disposal.

Quick Search

DeepDyve research library

Searches Linking to this Article