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Heterostructures composed of superconductor and ferroelectrics (SC/FE) are very important for manipulating the superconducting property and applications. However, growth of high quality superconducting iron chalcogenide films is challenging due to their volatility and FE substrate with rough surface and large lattice mismatch. Here we report a two-step growth approach to get high quality FeSe0.5Te0.5 (FST) films on ferroelectric Pb(Mg1/3Nb2/3)0.7Ti0.3O3 (PMN-PT) with large lattice mismatch, which show superconductivity at only around 10 nm. Through systematic study of structural and electric transport properties of samples with different thicknesses, the mechanism is uncovered for this approach to grow high quality FST. Moreover, electric-field-induced remarkable change of Tc (superconducting transition temperature) is demonstrated in 20 nm FST film. This work paves the way to grow high quality films which contain volatile element and have large lattice mismatch with substrate. It is also helpful for manipulating the superconducting property in SC/FE heterostructures.
This article was published in the following journal.
Name: ACS applied materials & interfaces
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