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Improving power conversion efficiency of photovoltaic devices has been widely investigated, however, most of researches mainly focus on the modification of the absorber layer. Here, we present an approach to enhance the efficiency of Cu(In,Ga)(S,Se)2 (CIGSSe) thin-film solar cells simply by tuning the CdS buffer layer. The CdS buffer layer was deposited by chemical bath deposition. Indium doping was done during the growth process by adding InCl3 into the growing aqueous solution. We show that the solar cell efficiency is increased by properly Indium doping. Based on the characteristics of the single CdS (with or without In-doping) layer and of the CIGSSe/CdS interface, we conclude that the efficiency enhancement is attributed to the interface-defect passivation of heterojunction, which significantly improves both open circuit voltage and fill factor. The results were supported by SCAPS simulations, which suggest that our approach can also be applied to other buffer systems.
This article was published in the following journal.
Name: ACS applied materials & interfaces
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